? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? da t a s h eet 33 4 6 , re v . - features schottky barrier chip i d e a l l y s u i t e d f o r a u t o m a t i c a s s e m b l y b low power loss, high efficiency surge overload rating to 30a peak for use in low voltage application a guard ring die construction f plastic case material has ul flammability classification rating 94v-o c h g e mechanical data case: low profile molded plastic terminals: solder plated, solderable per mil-std-750, method 2026 polarity: cathode band or cathode notch marking: type number weight: 0.093 grams (approx.) maximum ratings and electrical characteristics @t a =25c unless otherwise specified character i st i c s y m bol m b r s 12 0 - g mb rs 13 0 -g mb rs 14 0 -g unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 v rms reverse voltage v r(rms) 14 21 28 v average rectified output current @t l = 75c i o 1.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward voltage @i f = 1.0a v fm 0.55 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0.5 20 ma typical thermal resistance junction to ambient (note 1) r ja 95 k/w operating temperature range t j -65 to +125 c storage temperature range t stg -65 to +150 c note: 1. mounted on p.c. board with 5.0mm 2 copper pad areas m brs120 -g - m brs140 -g 1.0a surface mount schottky barrier diode smb/do - 214aa dim min max min max a 3.3 0 3. 9 4 0.1 30 0.155 b 4.06 4.70 0.160 0.185 c 1.91 2.11 0.075 0.083 d 0.152 0.305 0.006 0.012 e 5.08 5.59 0.2 0.220 f 2.13 2.44 0.084 0.096 g 0.051 0.203 0.002 0.008 h 0.76 1.27 0.030 0.05 in mm in inch green produc t s in compliance with the r o hs directive g ree n pr od u c t s sensitron semiconductor
0.01 0.1 1.0 10 0 0.4 0.8 1.2 i , inst a nt aneous forw ard c urrent (a) f v , instantaneous fwd voltage (v) fig. 2 typ. forward characteristics f t - 25oc j i pulse width = 300 s f m 10 20 30 40 0 1 10 100 i , peak forw ard surge current (a) fsm fi g . 3 max non-repetitive peak fwd sur g e current number of cycles at 60 hz single half sine-wave (jedec method) t = 150oc j 10 100 1000 0.1 1 10 100 c , junction cap acit ance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25c f = 1 mhz j 0 20 40 60 80 100 120 140 i , inst ant aneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g . 5 typical reverse characteristics t = 100oc j t = 75oc j t = 25oc j 100 10 1.0 0.1 0.01 0.001 0 0.5 1.0 25 50 75 100 125 150 i a verage for w ard current (a) (a v), t , lead temper a ture (oc) fig. 1 forward current derating curve l
mbrs120 -g -mbrs140 -g
?
!!"#$ ? ? %
&
'(&)*+,,---. & ./0 ? 12&%#
%3 & ./0 ? 33 46 ,
g ree n pr od u c t s
? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ?
discl a imer : 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior not ice to imp rove product characteristics. before ordering, purchasers are advised to contact the s ensitron semiconductor sales department for th e latest version of the datasheet(s). 2- in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users? fail-safe prec autions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of information, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or ot her rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any f o rm, in w hole or part, w i thout the expressed w r it ten permiss i on of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary pr ocedures are to be taken in accordance with related laws a nd regulations. m brs120 -g - m brs140 -g 1.0a surface mount schottky barrier diode 33 46 ,
|
